DUBLIN–(BUSINESS WIRE)–The “Global Gallium Nitride (GaN) Semiconductor Devices Market with COVID-19 Impact Analysis by Device Type (RF, Power, Opto), Wafer Size, Application, Vertical (Consumer & Enterprises, Automotive, Telecommunications), and Geography – Forecast to 2026” report has been added to ResearchAndMarkets.com’s offering.
The global GaN semiconductor devices market is estimated to be USD 19.4 billion in 2021 and is projected to reach USD 24.9 billion by 2026, at a CAGR of 5.2% during the forecast period.
The market has a promising growth potential due to several factors, including the wide gap property of GaN material facilitating innovative applications, success of GaN in RF power electronics, and the increasing adoption of GaN RF semiconductor devices for defense and aerospace applications.
Opto-semiconductors segment to estimated to hold largest market share in 2026
The opto-semiconductors segment for the GaN semiconductor device market is projected to hold the largest market share in 2026, by device type. The market growth of GaN opto-semiconductor devices can be attributed to the development of GaN opto-semiconductors which are primarily used in consumer and enterprises, industrial, and automotive industries. GaN light-emitting diodes (LEDs) are used in laptop and notebook displays, mobile displays, projectors, televisions and monitors, signs and large displays, etc. GaN LEDs are also used for interior and exterior lighting in the automotive industry such as headlights and signal lights, car interior lighting, fog lights, stop lights, and dome lights. In the industrial sector, they are used in warehouses, factories, industrial halls, warehouses, offices, etc.
Renewables vertical segment is estimated to register highest CAGR growth from 2021 to 2026
The renewables segment for the GaN semiconductor device market is estimated to register the highest CAGR growth during the forecast period, by vertical. This rapid growth can be attributed to the use of GaN transistors in designing energy storage systems, which have bi-directional power flow architectures and are simple in design, low cost, and highly efficient. These benefits offered by GaN has led to the increasing adoption of GaN transistors instead of the conventional silicon-based transistors in energy storage systems and other renewable solutions including AC solar panels, solar DC to AC inverters, and VAR compensators.
APAC is projected to become the largest geographical market by 2026
APAC is projected to register the largest market size of the GaN semiconductor device market by 2026. The implementation of several macroeconomic policies, rising consumerism, digital revolution, advancing wireless infrastructure, trade and economic integration, and increasing disposable income have accelerated the region’s economic growth. These factors are expected to lead to high growth of verticals such as consumer and enterprise, renewables, automotive, telecommunications, and industrial – where GaN semiconductor devices are extensively used. Moreover, the commercialization of 5G technology in China, South Korea, Japan, and other countries of the APAC region, along with the ongoing technological advancements in wireless communication infrastructure, is expected to spur demand for GaN devices.
Market Dynamics
Drivers
- Heightened Demand from Consumer and Enterprises and Automotive Verticals for Power Electronic Devices
- Continuous Emergence of Technologies in GaN Ecosystem
- Suitability of GaN in RF Applications
- Increasing Adoption of GaN RF Semiconductor Devices for Military, Defense, and Aerospace Applications
Restraints
- Higher Efficacy of Alternative such as Silicon Carbide for High-Voltage Semiconductor Applications
- Stagnation in Automotive Sector Further Intensified by COVID-19
Opportunities
- Potential Use of GaN in 5G Infrastructure Development
- Applications in Electric and Hybrid Electric Vehicles
- Rise in Demand for Data Centers, Laptops, and Tablets Triggered by COVID-19
- Consolidating Trend of Smart Manufacturing
Challenges
- High Material and Fabrication Costs
- Complexities Associated with Designing of Electrical Layout of GaN Devices
Companies Mentioned
- Ampleon
- Analog Devices
- Bel Power
- Brightloop
- Corsair
- Cree
- Efficient Power Conversion
- Epistar Corporation
- GaN Systems
- Infineon Technologies
- Macom
- Microchip Technology Inc.
- Mitsubishi Electric
- Nichia Corporation
- Northrop Grumman Corporation
- NXP Semiconductors
- Powdec K.K.
- Qorvo
- STMicroelectronics
- Sumitomo Electric Industries, Ltd.
- Texas Instruments
- Toshiba Infrastructure Systems and Solutions Corporation
- Transphorm
For more information about this report visit https://www.researchandmarkets.com/r/k0d23e
